Deal–Grove model
The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to predict and interpret thermal oxidation of silicon in semiconductor device fabrication.
The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to predict and interpret thermal oxidation of silicon in semiconductor device fabrication.
The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to predict and interpret thermal oxidation of silicon in semiconductor device fabrication.
Source: Wikipedia "Deal–Grove model" · CC BY-SA 4.0
Share this article: X · Bluesky