Extraordinary magnetoresistance

Extraordinary magnetoresistance (EMR) is a geometrical magnetoresistance effect discovered in 2000, where the change in electrical resistance upon the application of a large magnetic field can be greater than 1,000,000% at room temperature (orders of magnitude greater than other magnetoresistance effects such as GMR and CMR). The effect occurs in semiconductor-metal hybrid systems when a transverse magnetic field is applied.

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