Ferroelectric flash memory

Ferroelectric flash memory, (ferroelectric NAND, FeNAND, or FeFET-based NAND), is an emerging non-volatile memory technology that incorporates ferroelectric materials (typically doped hafnium oxide, HfO2) into NAND flash-like architectures. It addresses limitations of conventional charge-trap NAND flash, such as high power consumption, limited endurance, and scaling, by leveraging ferroelectric polarization for data storage.

Source: Wikipedia — Ferroelectric flash memory (CC BY-SA 4.0)