The Lazarus effect refers to semiconductor detectors; when these are used in harsh radiation environments, defects begin to appear in the semiconductor crystal lattice as atoms become displaced because of the interaction with the high-energy traversing particles. These defects, in the form of both lattice vacancies and atoms at interstitial sites, have the effect of temporarily trapping the electrons and holes which are created when ionizing particles pass through the detector.
The Lazarus effect refers to semiconductor detectors; when these are used in harsh radiation environments, defects begin to appear in the semiconductor crystal lattice as atoms become displaced because of the interaction with the high-energy traversing particles. These defects, in the form of both lattice vacancies and atoms at interstitial sites, have the effect of temporarily trapping the electrons and holes which are created when ionizing particles pass through the detector.
Source: Wikipedia "Lazarus effect" · CC BY-SA 4.0
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