Metal assisted chemical etching

Metal Assisted Chemical Etching (also known as MACE) is the process of wet chemical etching of semiconductors (mainly silicon) with the use of a metal catalyst, usually deposited on the surface of a semiconductor in the form of a thin film or nanoparticles. The semiconductor, covered with the metal, is then immersed in an etching solution containing an oxidizing agent and hydrofluoric acid.

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