The Moss-Burstein effect, also known as the Burstein–Moss shift, is the phenomenon in which the apparent band gap of a semiconductor is increased as the absorption edge is pushed to higher energies as a result of some states close to the conduction band being populated. This is observed for a degenerate electron distribution such as that found in some degenerate semiconductors and is known as a Moss–Burstein shift.
The Moss-Burstein effect, also known as the Burstein–Moss shift, is the phenomenon in which the apparent band gap of a semiconductor is increased as the absorption edge is pushed to higher energies as a result of some states close to the conduction band being populated. This is observed for a degenerate electron distribution such as that found in some degenerate semiconductors and is known as a Moss–Burstein shift.
Source: Wikipedia "Moss–Burstein effect" · CC BY-SA 4.0
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