Schottky barrier
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode.
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode.
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode.
Source: Wikipedia "Schottky barrier" · CC BY-SA 4.0
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